MS9N90 mosfet equivalent, n-channel mosfet.
* RDS(on) (Max 1.4 Ω )@VGS=10V
* Gate Charge (Typical 47nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction Te.
Features
* RDS(on) (Max 1.4 Ω )@VGS=10V
* Gate Charge (Typical 47nC)
* Improved dv/dt Capability, High Rugge.
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