Download MS9N90 Datasheet PDF
MS9N90 datasheet preview
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MS9N90 Key Features

  • RDS(on) (Max 1.4 Ω )@VGS=10V
  • Gate Charge (Typical 47nC)
  • Improved dv/dt Capability, High Ruggedness
  • 100% Avalanche Tested
  • Maximum Junction Temperature Range (150°C)
  • RoHS pliant package Application
  • Adapter
  • Switching Mode Power Supply Packing &

MS9N90 Description

The MS9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.