DMS05N60 - N-Channel MOSFET

Bruckewell Technology

Key Features

Depletion Mode (Normally On).
Advanced Planar Technology.
Rugged Poly-silicon Gate Cell Structure.
Fast Switching Speed.
RoHS Compliant/Lead Free.
ESD Sensitive BVDSX 600V RDS(ON) (Max. ) 700Ω IDSS,min 12mA.

DMS05N60 n-channel mosfet by Bruckewell Technology - Datasheet Preview

Datasheet Details

Part number	DMS05N60
Manufacturer	Bruckewell Technology
File Size	546.87 KB
Description	N-Channel MOSFET
Datasheet	DMS05N60 Datasheet

Full PDF Text Transcription for DMS05N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMS05N60. For precise diagrams, and layout, please refer to the original PDF.

DMS05N60 N-Channel Depletion-Mode MOSFET FEATURES • Depletion Mode (Normally On) • Advanced Planar Technology • Rugged Poly-silicon Gate Cell Structure • Fast Switching S...

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echnology • Rugged Poly-silicon Gate Cell Structure • Fast Switching Speed • RoHS Compliant/Lead Free • ESD Sensitive BVDSX 600V RDS(ON) (Max.) 700Ω IDSS,min 12mA Applications • Normally-on Switches • SMPS start-up Circuit • Linear Amplifier • Converters • Constant Current Source • Telecom Absolute Maximum Ratings Symbol VDSX VDGX ID IDM PD VGS TL TJ and TSTG Drain-to-Source Voltage Drain-to-Gate Voltage [1] TA=25 ℃ unless otherwise specified Parameter [1] DMS05N60 600 600 0.020 0.081 0.50 ±20 300 -55~150 Unit V V A W V Continuous Drain Current Pulsed Drain Current Power Dissipation Gate-to-Source Voltage Soldering Tempera

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