Datasheet Details
| Part number | MSU4N60 |
|---|---|
| Manufacturer | Bruckewell Technology |
| File Size | 684.58 KB |
| Description | 600V N-Channel MOSFET |
| Datasheet |
 MSU4N60 Datasheet
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General Description
The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Key Features
- Low On Resistance.
- Simple Drive Requirement.
- Low Gate Charge.
- Fast Switching Characteristic.
- RoHS compliant / Halogen free package available 1.Gate 2. Drain 3. Source Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) Value 600 ±30 4.5 2.6 18 33 4.0 10 4.5 300 Units V V A A A mJ A mJ V/ns °C IDM EAS IAR EAR dv/dt TL Drain Current Pulsed Single.