Datasheet Details
| Part number | MSU6N70 |
|---|---|
| Manufacturer | Bruckewell Technology |
| File Size | 941.71 KB |
| Description | 700V N-Channel MOSFET |
| Datasheet |
 MSU6N70 Datasheet
|
|
|
General Description
The MSU6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Key Features
- Low On Resistance.
- Simple Drive Requirement.
- Low Gate Charge.
- Fast Switching Characteristic.
- RoHS compliant / Halogen free package available 1.Gate 2. Drain 3. Source Symbol VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Parameter Value 700 ±30 6.0 4.8 28 230 7.0 14.7 4.5 300 Units V V A A A mJ A mJ V/ns °C Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) IDM EAS IAR EAR dv/dt TL Drain Current Pulsed Si.