Datasheet Summary
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Features
- VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ VGS =4.5V RDS(ON) < 130mΩ @ VGS =2.5V
- VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 240mΩ @ VGS =-2.5V
- Super high dense cell design for extremely low RDS(ON)
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Schematic Diagram
Application
- Battery protection
- Load switch
- Power management
Package Marking and Ordering Information
Device Marking
Device
Device Package
TSOP-6
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