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CSN64N12 - N-Channel Trench Power MOSFET

Description

The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Features

  • VDS=82V; ID=120A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number CSN64N12
Manufacturer CASS
File Size 603.38 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSN64N12 Datasheet

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Full PDF Text Transcription

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N-Channel Trench Power MOSFET CS64N12 CSN64N12 General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=82V; ID=120A@ VGS=10V; RDS(ON)<6.8mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply To-220 TO-220N Top View Schematic Diagram VDS = 82 V ID = 120A RDS(ON) = 5.
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