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CSP30N75 - N-Channel Trench Power MOSFET

Description

The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a wide variety of applications.

Features

  • VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V.
  • High density cell design for ultra low Rdson.
  • Lead free product is acquired.

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Datasheet Details

Part number CSP30N75
Manufacturer CASS
File Size 527.65 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSP30N75 Datasheet

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Full PDF Text Transcription

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N-Channel Trench Power MOSFET General Description The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V ● High density cell design for ultra low Rdson ● Lead free product is acquired Application ● Battery protection ● Load switch ● Power management 100% UIS TESTED! CSP30N75 Schematic Diagram Marking and pin Assignment Package Marking and Ordering Information Device Marking Device Device Package CSP30N75 CSP30N75 SOP-8 Reel Size Ø330mm Table 1.
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