CSP30N75 Description
The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
CSP30N75 Key Features
- VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
- High density cell design for ultra low Rdson
- Lead free product is acquired
- Battery protection
- Load switch
- Power management