CSP30N75 mosfet equivalent, n-channel trench power mosfet.
* VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
* High density cell design for ultra low Rdson
* Lead free product is acquired
Appl.
Features
* VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
* High density cell design .
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