Datasheet Details
| Part number | 2N2270 |
|---|---|
| Manufacturer | CDIL |
| File Size | 119.46 KB |
| Description | NPN Silicon Planar Transistor |
| Datasheet |
 2N2270 Datasheet
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| Part number | 2N2270 |
|---|---|
| Manufacturer | CDIL |
| File Size | 119.46 KB |
| Description | NPN Silicon Planar Transistor |
| Datasheet |
2N2270 Datasheet
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Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Junction to Case SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg VALUE 45 60 60 7.0 1.0 1.0 5.71 5.0 28.6 - 65 to +200 UNIT V V V V A W mW/ ºC W mW/ ºC ºC Rth (j-a) Rth (j-c) 175 35 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCER IC=1mA, RBE=10Ω Collector Emitter Voltage VCBO Collector Base Voltage IC=100µA, IE=0 V IE=100µA, IC=0 Emitter Base Voltage EBO ICBO VCB=60V, IE=0 Collector Cut Off Current VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain IEBO *VCE (sat) *VBE (sat) *hFE VEB=5V, IC=0 IC=150mA, IB=15mA IC=150mA, IB=15mA IC=1mA, VCE=10V IC=150mA, VCE=10V *Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2% MIN 45 60 60 7 TYP MAX 50 100 100 0.9 1.2 30 50 200 UNIT V V V V nA µA nA V V 2N2270Rev_1 040904E Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR TRANSISTOR www.DataSheet4U.com 2N2270 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) SMALL SIGNAL CHARACTERISTICS DESCRIPTION Small Signal Current Gain Transition Frequency Output Capacitance Input Capacitance Noise Figure SYMBOL hfe fT Cob Cib NF TEST CONDITION IC=5mA, VCE=10V, f=1KHz IC=50mA, VCE=10V, f=20MHz VCB=10V, IE=0, f=100KHz VEB=0.5V, IC=0, f=100KHz IC=300µA, VCE=10V, f=1KHz,Bandwidth
www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N2270 | AMPLIFIER TRANSISTOR | Motorola |
| ETC | 2N2270 | High-Speed Powwer Transistors | ETC |
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2N2270 | NPN SILICON TRANSISTOR | Central Semiconductor |
 |
2N2270AL | Bipolar NPN Device | Semelab Plc |
| Part Number | Description |
|---|---|
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| 2N2219A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
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| 2N2221A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2222 | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2222A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
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| 2N2369 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |