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2N3440 - NPN HIGH VOLTAGE SILICON TRANSISTORS

This page provides the datasheet information for the 2N3440, a member of the 2N3439 NPN HIGH VOLTAGE SILICON TRANSISTORS family.

Description

SYMBOL 2N3439 Collector -Emitter Voltage VCEO 350 Collector -Base Voltage VCBO 450 Emitter -Base Voltage VEBO 7.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation@ Ta=25 degC PD 1.0 Derate Above 25 deg C 5.7 Power Dissipation@ Tc=25 degC PD 5.0 Derat

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Datasheet Details

Part number 2N3440
Manufacturer CDIL
File Size 44.17 KB
Description NPN HIGH VOLTAGE SILICON TRANSISTORS
Datasheet download datasheet 2N3440 Datasheet
Additional preview pages of the 2N3440 datasheet.

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Full PDF Text Transcription

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN HIGH VOLTAGE SILICON TRANSISTORS IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified) DESCRIPTION SYMBOL 2N3439 Collector -Emitter Voltage VCEO 350 Collector -Base Voltage VCBO 450 Emitter -Base Voltage VEBO 7.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation@ Ta=25 degC PD 1.0 Derate Above 25 deg C 5.7 Power Dissipation@ Tc=25 degC PD 5.0 Derate Above 25 deg C 28.
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