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2N5089 Datasheet NPN SILICON EPITAXIAL TRANSISTORS

Manufacturer: CDIL

Download the 2N5089 datasheet PDF. This datasheet also includes the 2N5088 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N5088-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5089
Manufacturer CDIL
File Size 156.23 KB
Description NPN SILICON EPITAXIAL TRANSISTORS
Datasheet download datasheet 2N5089 Datasheet

General Description

SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=25 deg C PD Derate Above 25 deg C Junction Temperature Tj Storage Temperature Tstg THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 2N5089 4.5 50 625 5.0 1.5 12 150 -55 to +150 357 125 Min 30 25 2N5089 UNITS 30 V 25 V V mA mW mW/deg C W mW/deg C deg C deg C deg C/W deg C/W Max UNITS -V -V Collector -Base Voltage VCBO IC=100uA,IE=0 2N5088 35 - V 2N5089

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE EBC Amplifier Transistors ABSOLUTE MAXIMUM.