2N5320 - SILICON POWER SWITCHING TRANSISTORS

CDIL

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N

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2N5320 silicon power switching transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	2N5320
Manufacturer	CDIL
File Size	63.50 KB
Description	SILICON POWER SWITCHING TRANSISTORS
Datasheet	2N5320 Datasheet

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Other Datasheets by CDIL

Part Number	Description
2N5321	SILICON POWER SWITCHING TRANSISTORS
2N5322	SILICON POWER SWITCHING TRANSISTORS
2N5323	SILICON POWER SWITCHING TRANSISTORS
2N5086	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
2N5087	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
2N5088	NPN SILICON EPITAXIAL TRANSISTORS
2N5089	NPN SILICON EPITAXIAL TRANSISTORS
2N5294	NPN PLASTIC POWER TRANSISTOR
2N5296	NPN PLASTIC POWER TRANSISTOR
2N5298	NPN PLASTIC POWER TRANSISTOR

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package Medium Power Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N5320 75 100 7 2N5321 2N5322 50 75 75 100 5 7 2.0 1.0 1 5.71 10 57.14 - 65 to +200 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 175 17.