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2N5400 Datasheet PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Manufacturer: CDIL

Datasheet Details

Part number 2N5400
Manufacturer CDIL
File Size 85.53 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTOR
Datasheet download datasheet 2N5400 Datasheet

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 120 130 5.0 600 625 5.0 1.5 12 - 55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage *VCEO IC=1mA, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=-0 Collector Cut Off Current ICBO VCB=100V, IE=0 VCB=100V, IE=0, Ta=100ºC Emitter Cut Off Cur

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package EBC Amplifier Transistor ABSOLUTE MAXIMUM.