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2N6718 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Description

SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation Operating And Storage Junction Temperature Range VCBO VCEO VEBO IC PD Tj, Tstg VALUE 100 100 5 1.5 850 -55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specifi

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Datasheet Details

Part number 2N6718
Manufacturer CDIL
File Size 74.88 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTOR
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6718 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25ºC) DESCRIPTION SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation Operating And Storage Junction Temperature Range VCBO VCEO VEBO IC PD Tj, Tstg VALUE 100 100 5 1.
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