BC300 - (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Description

SYMBOL BC300 BC301 VCEO 80 60 Collector Emitter Voltage VCBO Collector Base Voltage 120 90 Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Junction Temperature Storage Temperature Range VEBO IC PD Tj Tstg 7.0 7.0 500 850 175 -65 to +200 BC302 45 60 7.0 UNITS V V V mA mW ºC ºC ELE

CDIL

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Datasheet Details

Part number	BC300
Manufacturer	CDIL
File Size	107.00 KB
Description	(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS
Datasheet	BC300 Datasheet
Additional preview pages of the BC300 datasheet.

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Other Datasheets by CDIL

BC301 - (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC302 - (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC303 - PNP EXPITAXIAL PLANAR SILICON TRANSISTORS
BC304 - PNP EXPITAXIAL PLANAR SILICON TRANSISTORS
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BC307A - SILICON PLANAR EPITAXIAL TRANSISTORS
BC307B - SILICON PLANAR EPITAXIAL TRANSISTORS
BC307C - SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC300 BC301 VCEO 80 60 Collector Emitter Voltage VCBO Collector Base Voltage 120 90 Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Junction Temperature Storage Temperature Range VEBO IC PD Tj Tstg 7.0 7.0 500 850 175 -65 to +200 BC302 45 60 7.

Published: May 5, 2014 |