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BC307B - SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BC307B, a member of the BC307 SILICON PLANAR EPITAXIAL TRANSISTORS family.

Description

SYMBOL BC307 BC308 BC309 Collector Emitter Voltage Collector Base Voltage VCEO VCBO 45 25 25 50 30 30 Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC VEBO IC PD 555 100 350 Derate Above 25ºC 2.8 Power Dissipation@ Tc=25ºC PD 1 Derate Above 25ºC 8 Operatin

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Datasheet preview – BC307B

Datasheet Details

Part number BC307B
Manufacturer CDIL
File Size 106.26 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC307B Datasheet
Additional preview pages of the BC307B datasheet.

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Other Datasheets by CDIL
  • BC307 - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC307A - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC307C - SILICON PLANAR EPITAXIAL TRANSISTORS
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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification From DC To Low Radio Frequencies ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC307 BC308 BC309 Collector Emitter Voltage Collector Base Voltage VCEO VCBO 45 25 25 50 30 30 Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC VEBO IC PD 555 100 350 Derate Above 25ºC 2.
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