Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC413, B, C
BC414, B, C
TO-92
Plastic Package
CB E
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Power Dissipation at Tc=25ºC
VCEO
VCBO
VEBO
IC
PD
PD
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
TJ, Tstg
BC413
30
45
5.0
100
350
2.8
1.0
8.0
- 55 to +150
BC414
45
50
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
125
357
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
VCBO
VEBO
ICBO
IC=10µA, IE=0
IE=10µA, IC=0
VCB=30V, IE=0
VCB=30V, IE=0, Ta= +125ºC
Emitter Cut Off Voltage
DC Current Gain
IEBO VEB=4V, IC=0,
hFE IC=10µA, VCE=5V, BC413/414
BC413
>30
>45
>5.0
<15
<5.0
<15
>100
BC414
>45
>50
Collector Emitter Saturation Voltage VCE (sat)
Base Emitter Saturation Voltage
Base Emitter On Voltage
VBE (sat)
VBE (on)
*IB is Value for Which IC=11mA at VCE=1V
**Pulse test:- Pulse Width =300µs, Duty Cycle 2%
BC413_414Rev060706E
IC=2mA, VCE=5V
BC413B/414C
BC413C/414C
BC413/414
IC=10mA, IB=0.5mA
IC=10mA, IB=see *
**IC=100mA, IB=5mA
**IC=100mA, IB=5mA
IC=10µA, VCE=5V
IC=100µA, VCE=5V
IC=2mA, VCE=5V
180 - 460
380 - 800
180 - 800
<0.25
<0.6
<0.6
TYP1.1
TYP0.52
TYP0.55
0.55 - 0.75
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nA
µA
nA
V
V
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 5
