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BC413B Datasheet NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Manufacturer: CDIL

Download the BC413B datasheet PDF. This datasheet also includes the BC413 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BC413-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BC413B
Manufacturer CDIL
File Size 350.18 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Download BC413B Download (PDF)

General Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC VCEO VCBO VEBO IC PD PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC413 30 45 5.0 100 350 2.8 1.0 8.0 - 55 to +150 BC414 45 50 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 125 357 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Base Voltage Emitter Base Voltage Collector Cut Off Current VCBO VEBO ICBO IC=10µA, IE=0 IE=10µA, IC=0 VCB=30V, IE=0 VCB=30V, IE=0, Ta= +125ºC

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC413, B, C BC414, B, C TO-92 Plastic Package CB E ABSOLUTE MAXIMUM RATINGS.