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BC557B - PNP Silicon Transistor

Description

SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage VCES Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Collector Current Peak ICM Base Current Peak IBM Emitter Current Peak IEM Power Dissipation at Ta=25ºC PD Derate Above 25ºC

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Datasheet Details

Part number BC557B
Manufacturer CDIL
File Size 347.00 KB
Description PNP Silicon Transistor
Datasheet download datasheet BC557B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CB E BC556, A, B, BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage VCES Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Collector Current Peak ICM Base Current Peak IBM Emitter Current Peak IEM Power Dissipation at Ta=25ºC PD Derate Above 25ºC Storage Temperature Tstg Junction Temperature Tj BC556 65 80 80 BC557 45 50 50 5 100 200 200 200 500 4.