Datasheet4U Logo Datasheet4U.com

BC808-25 - SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BC808-25, a member of the BC807 SILICON PLANAR EPITAXIAL TRANSISTORS family.

📥 Download Datasheet

Datasheet preview – BC808-25

Datasheet Details

Part number BC808-25
Manufacturer CDIL
File Size 192.65 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC808-25 Datasheet
Additional preview pages of the BC808-25 datasheet.

📁 Similar Datasheet

  • BC808-25 - PNP Silicon AF Transistors (Siemens Semiconductor Group)
  • BC808-25 - SMD General Purpose PNP Transistors (Diotec)
  • BC808-25 - PNP Plastic Encapsulated Transistor (SeCoS)
  • BC808-25 - PNP SILICON TRANSISTOR (UTC)
  • BC808-25 - PNP General Purpose Transistor (LITE-ON)
  • BC808-25 - PNP General Purpose Amplifier (GME)
  • BC808-25 - PNP Silicon AF Transistor (Infineon)
  • BC808-25 - GENERAL PURPOSE TRANSISTORS (RFE)
  • BC808-25LT1 - General Purpose Transistors (ON Semiconductor)
  • BC808-25LT1G - General Purpose Transistors (ON Semiconductor)
Other Datasheets by CDIL
  • BC808-16 - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC808-40 - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC808 - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC846 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC846A - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC846B - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC847 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC847A - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription

Click to expand full text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC808–40 = 5G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V –VCES –VCE0 –ICM Ptot Tj BC807 max. 50 max. 45 max. max. max.
Published: |