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BC808 - SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BC808, a member of the BC807 SILICON PLANAR EPITAXIAL TRANSISTORS family.

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Datasheet Details

Part number BC808
Manufacturer CDIL
File Size 192.65 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC808 Datasheet
Additional preview pages of the BC808 datasheet.

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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC808–40 = 5G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V –VCES –VCE0 –ICM Ptot Tj BC807 max. 50 max. 45 max. max. max.
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