BCW30 - SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Datasheet Details

Part number	BCW30
Manufacturer	CDIL
File Size	76.04 KB
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BCW30 Datasheet
Additional preview pages of the BCW30 datasheet.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –Ic = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz hFE –VCB0 –VCE0 –ICM Ptot Tj BCW29 > 120 < 260 max. max. max. max, max.

Published: Jul 18, 2017 |