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BCY58 - NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS

General Description

SYMBOL BCY58 Collector -Emitter Voltage VCEO 32 Collector -Emitter Voltage(RBE=10 ohms) VCES 32 Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25 degC PD Derate Above 25 deg C Power Dissipation@ Tc=25 degC PD Derate Above 25 deg C Operating And Sto

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Datasheet Details

Part number BCY58
Manufacturer CDIL
File Size 91.81 KB
Description NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BCY58 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY58 Collector -Emitter Voltage VCEO 32 Collector -Emitter Voltage(RBE=10 ohms) VCES 32 Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25 degC PD Derate Above 25 deg C Power Dissipation@ Tc=25 degC PD Derate Above 25 deg C Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) Junction to Ambient Rth(j-a) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMB