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BCY59 - NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS

Download the BCY59 datasheet PDF. This datasheet also covers the BCY58 variant, as both devices belong to the same npn complementary silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL BCY58 Collector -Emitter Voltage VCEO 32 Collector -Emitter Voltage(RBE=10 ohms) VCES 32 Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25 degC PD Derate Above 25 deg C Power Dissipation@ Tc=25 degC PD Derate Above 25 deg C Operating And Sto

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Note: The manufacturer provides a single datasheet file (BCY58-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BCY59
Manufacturer CDIL
File Size 91.81 KB
Description NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BCY59 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY58 Collector -Emitter Voltage VCEO 32 Collector -Emitter Voltage(RBE=10 ohms) VCES 32 Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25 degC PD Derate Above 25 deg C Power Dissipation@ Tc=25 degC PD Derate Above 25 deg C Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) Junction to Ambient Rth(j-a) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMB