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BF240 - NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS

Datasheet Details

Part number BF240
Manufacturer CDIL
File Size 326.95 KB
Description NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS
Datasheet download datasheet BF240 Datasheet

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Dereate Above 25 deg C Power Dissipation@ Tc=25ºC Dereate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg Value 40 40 4 25 350 2.8 1 8.0 -55 to +150 UNITS V V V mA mW mW/ ºC W mW/ ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified) DESCRIPTION Collector Emitter Voltage Collector Base Voltage EmitterBase Voltage Collector-Cut off Current Base Emitter On Voltage DC Current Gain BF240 BF241 Transition Frequency BF240 BF241 Feedback Capacitance Cre VCB=10V, IE=0 , f=1MHz *Pulse Test: Pulse Width < 300us, Duty Cycle < 2%.

fT IC=1mA, VCE=10V f=100MHz 600 470 0.28 0.34 MHz MHz pF SYMBOL BVCEO * BVCBO BVEBO ICBO VBE(on) hFE TEST CONDITION IC=1mA,IB=0 IC=100uA.IE=0 IE=10uA, IC=0 VCB=20V,IE=0 IC=1mA,VCE=10V IC=1mA,VCE=10V 0.65 65 35 0.7 MIN 40 40 4 0.1 0.74 220 125 TYP MAX UNITS V V V uA V Continental Device India Limited Data Sheet Page 1 of 3 http://www.Datasheet4U.com BF240 BF241 TO-92 Plastic Package TO-92 Plastic Package TO-92 Transistors on Tape and Ammo Pack B Dimension With 'L' Uncontrolled Mechanical Data h T h A H3 H1 Ho H2 C1 C2 L W2 Wo A1 P (p) h1 h1 Ammo Pack Style Adhesive Tape on Top Side D FEE Carrier Strip Label W1 W Flat side 186 (7.3") A t1 t F1 F P2 F2 Do 332 (1.

43 7") SPECIFICATION SYMBOL A1 A T P Po P2 F h h1 W Wo W1 W2 Ho H1 L Do t F1, F2 H2 H3 | C1 - C2 | (P) 0.45 MIN.

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240 BF241 TO-92 Plastic Package E BC A.M.