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BF959 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR

General Description

SYMBOL VALUE Collector Emitter Voltage VCEO 20 Collector Base Voltage VCBO 30 Emitter Base Voltage VEBO 3 Collector Current Continuous IC 100 Power Dissipation @ Ta=25ºC PD 625 Derate Above 25ºC 5.0 Power Dissipation @ Tc=25ºC PD 1.5 Derate Above 25ºC 12 Operating And Storag

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Datasheet Details

Part number BF959
Manufacturer CDIL
File Size 109.17 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Datasheet download datasheet BF959 Datasheet

Full PDF Text Transcription for BF959 (Reference)

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A...

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ON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Collector Emitter Voltage VCEO 20 Collector Base Voltage VCBO 30 Emitter Base Voltage VEBO 3 Collector Current Continuous IC 100 Power Dissipation @ Ta=25ºC PD 625 Derate Above 25ºC 5.0 Power Dissipation @ Tc=25ºC PD 1.5 Derate Above 25ºC 12 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 83.