Datasheet4U Logo Datasheet4U.com

BSV16 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Download the BSV16 datasheet PDF. This datasheet also covers the BSV15 variant, as both devices belong to the same pnp silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL BSV15 BSV16 BSV17 UNIT Collector -Emitter Voltage VCEO 40 60 80 V Collector -Emitter Voltage VCES 40 60 90 V Emitter -Base Voltage VEBO 5.0 5.0 5.0 V Collector Current (DC) IC 1.0 A Base Current (DC) IB 200 mA Power Dissipation up to Tamb=25 degC Ptot 0.8 W Power Di

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSV15-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BSV16
Manufacturer CDIL
File Size 87.96 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BSV16 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSV16 PNP TRANSISTORS Siemens Semiconductor Group
BSV16 (BSV15 - BSV17) Medium Power Transistors Comset Semiconductors
BSV16 PNP Medium Power Transistor Philips
BSV16 AMPLIFIER TRANSISTOR Motorola
BSV1 A Scrubbing Circuit Beijing Microelectronics

Other Datasheets by CDIL

Part Number Description
BSV15 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BSV17 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BSV15 BSV16 BSV17 TO- 39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BSV15 BSV16 BSV17 UNIT Collector -Emitter Voltage VCEO 40 60 80 V Collector -Emitter Voltage VCES 40 60 90 V Emitter -Base Voltage VEBO 5.0 5.0 5.0 V Collector Current (DC) IC 1.0 A Base Current (DC) IB 200 mA Power Dissipation up to Tamb=25 degC Ptot 0.8 W Power Dissipation up to Tcase=25 degC 5.0 W Power Dissipation up to Tmb=50 degC 5.