Datasheet Details
| Part number | CDT13003 |
|---|---|
| Manufacturer | CDIL |
| File Size | 202.87 KB |
| Description | NPN SILICON POWER TRANSISTOR |
| Datasheet | CDT13003_CDIL.pdf |
|
|
Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor.
| Part number | CDT13003 |
|---|---|
| Manufacturer | CDIL |
| File Size | 202.87 KB |
| Description | NPN SILICON POWER TRANSISTOR |
| Datasheet | CDT13003_CDIL.pdf |
|
|
|
Collector Base Voltage Collector Emitter (sus) Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Base Current Continuous Peak (1) Emitter Current Continuous Peak (1) Power Dissipation @ Ta=25 ºC Derate Above 25ºC Power Dissipation @ Tc=25 ºC Derate Above 25ºC www.DataSheet4U.com Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purpose: 1/8" from Case for 5 Seconds (1) Pulse Test: Pulse Width=5ms, Duty Cycle=10% ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emitter (sus) Voltage Collector Cut Off Current Emitter Cut Off Current *Pulse Test:- PW=300µ s, Duty Cycle=2% CDT13003Rev_1 230306D SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD PD Tj, Tstg VALUE 600 400 9.0 1.8 3.5 0.75 1.5 2.25 4.5 1.4 11.2 50 480 - 65 to+150 UNIT V V V A A A A A A W mW/ ºC W mW/ ºC ºC Rth (j-c) Rth (j-a) TL 2.08 89 275 ºC/W ºC/W ºC SYMBOL VCBO *VCEO(sus) ICBO IEBO TEST CONDITION IC=1mA, IE=0 IC=10mA, IB=0 VCB=600V, IE=0 VCB=600V, IE=0, Tc=100ºC VEB=9V, IC=0 MIN 600 400 - TYP - MAX 1.0 5.0 1.0 UNIT V V mA mA mA Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION DC Current Gain Collector Emitter Saturation Voltage SYMBOL *hFE *VCE (sat) TEST CONDITION **IC=0.5A, VCE=5V IC=1.5A, VCE=5V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A,Tc=100ºC Base Emitter Saturation Voltage *VBE (sat) IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A,Tc=100ºC DYNAMIC CHARACTERISTICS DESCRIPTION Current Gain
| Part Number | Description |
|---|