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CMMT591 Datasheet Preview

CMMT591 Datasheet

SILICON PLANAR EPITAXIAL TRANSISTORS

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
www.DataSheet4U.com
SOT-23 Formed SMD Package
CMMT591
SILICON PLANAR EPITAXIAL TRANSISTORS
PNP transistor
Marking
CMMT = 591
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Peak Pulse current
Base current
Total power dissipation at Tamb = 25°C
Junction temperature
D.C. current gain
–IC = 500 mA; VCE = 5 V
Transition frequency at f = 100 MHz
IC = 50 mA; VCE = 10 V
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tj
max.
max.
max.
max.
max.
max.
max.
max.
80 V
60 V
5V
1A
2A
200 mA
500 mW
150 ° C
hFE min. 100
max. 300
fT min. 150 MHz
Continental Device India Limited
Data Sheet
Page 1 of 3




CDIL

CMMT591 Datasheet Preview

CMMT591 Datasheet

SILICON PLANAR EPITAXIAL TRANSISTORS

No Preview Available !

www.DataSheet4U.com
CMMT591
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Peak Pulse current
Base current
Total power dissipation at Tamb = 25°C
Storage temperature
Junction temperature
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
max. 80 V
max. 60 V
max.
5V
max.
1A
max.
2A
max. 200 mA
max. 500 mW
-55 to +150 ° C
max. 150 ° C
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector cut-off current
IE = 0; VCB = 60 V
ICBO
VBE = 0; VCE = 60 V
ICES
max.
max.
100 nA
100 nA
Emitter cut-off current
VEB = 4 V; IC = 0
IEBO max. 100 nA
Breakdown voltages
IC = 10 mA; IB = 0
IC = 100 µA; IE = 0
IE = 100 µA; IC = 0
VCEO
VCBO
VEBO
min.
min.
min.
60 V
80 V
5V
Base-emitter voltage
IC = 1 A; VCE = 5 V
VBE* max.
1V
Saturation voltage
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 100 mA
VCEsat*
VBEsat*
max.
max.
max.
300 mV
600 mV
1.2 V
D.C. current gain
IC = 1 mA; VCE = 5 V
IC = 500 mA; VCE = 5 V*
IC = 1 A; VCE = 5 V*
IC = 2 A; VCE = 5 V*
hFE min. 100
min. 100
max. 300
min.
80
min.
15
Collector capacitance at f = 1 MHz
IE = 0; VCB = 10 V
Cob max. 10 pF
Transition frequency at f = 100 MHz
IC = 50 mA; VCE = 10 V
fT min. 150 MHz
* Measured under pulsed conditions: Pulse width = 300 µs, duty cycle = 2%.
Continental Device India Limited
Data Sheet
Page 2 of 3


Part Number CMMT591
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Maker CDIL
Total Page 3 Pages
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