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CSD471A - NPN SILICON PLANAR EPITAXIAL TRANSISTOR

Description

SYMBOL VALUE Collector -Base Voltage BVCBO 40 Collector Emitter Voltage BVCEO 30 Emitter Base Voltage BVEBO 5.0 Collector Current IC 1.0 Collector Dissipation PC 800 Junction Temperature Tj 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unles

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Datasheet Details

Part number CSD471A
Manufacturer CDIL
File Size 150.97 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTOR
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD471A TO-92 BCE ECB Low Frequency Power Amplifier. Complementary CSB564A ABSOLUTE MAXIMUM RATINGS(Ta=25deg C ) DESCRIPTION SYMBOL VALUE Collector -Base Voltage BVCBO 40 Collector Emitter Voltage BVCEO 30 Emitter Base Voltage BVEBO 5.0 Collector Current IC 1.0 Collector Dissipation PC 800 Junction Temperature Tj 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN Collector -Base Voltage BVCBO IC=100uA, IE=0 40 Collector Emitter Voltage BVCEO IC=10mA, IB=0 30 Emitter Base Voltage BVEBO IE=100uA, IC=0 5.
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