• Part: CTZ2.6
  • Description: HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
  • Category: Diode
  • Manufacturer: Continental Device India
  • Size: 245.09 KB
Download CTZ2.6 Datasheet PDF
Continental Device India
CTZ2.6
FEATURES These Zeners Are Best Suited For Industrial Purpose , Military & Space applications. Hermetically Sealed Glass With Double Stud And Glass Passivated Chip Provides Excellent Stabililty and Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Power Dissipation @TA=25ºC PTA 500 PS Surge Power Dissipation 5 tp=8.3m S TJ Junction Temperature 175 Tstg Storage Temperature -65 to+175 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Rth(j-a) Thermal Resistance Junction Ambient Forward Voltage at IF=200m A UNIT m W W ºC ºC VALUE UNIT 0.3 ºC/m W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) r ZK @ IZK IZT IR @ VZT @ r ZT @ DEVICE Temp. IZK - VR IZT - IZT - Coeff.of MAX MAX Zener Voltage typ (V) (Ω) (m A) (Ω) (m A) (%/ºC ) (µA) CTZ2.6 2.6 30 20 600 1 -0.085 75 CTZ2.7 2.7 30 20 600 1 -0.085 75 CTZ3.0 3.0 48 20 600 1 -0.075 20 CTZ 3.3 3.3 44 20 600 1 -0.070 10 CTZ 3.6 3.6 42 20 600 1...