• Part: MJE340
  • Description: NPN EPITAXIAL SILICON POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 73.49 KB
Download MJE340 Datasheet PDF
Continental Device India
MJE340
MJE340 is NPN EPITAXIAL SILICON POWER TRANSISTOR manufactured by Continental Device India.
DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD Tj, Tstg VALUE 300 300 3.0 500 1.25 10 20 0.16 - 65 to +150 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 6.25 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage - VCEO (sus) IC=1m A, IB=0 Collector Cut Off Current ICBO VCB=300V, IE=0 Emitter Cut Off Current IEBO VEB=3V, IC=0 DC Current Gain h FE IC=50m A,...