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MPS6530 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air SYMBOL VCEO VCBO VEBO IC PD Tj,

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Datasheet Details

Part number MPS6530
Manufacturer CDIL
File Size 107.73 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS EBC AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air SYMBOL VCEO VCBO VEBO IC PD Tj, Tstg Rth (j-c) Rth (j-a) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Vo
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