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MPS8599 Datasheet Preview

MPS8599 Datasheet

PNP SILICON PLANAR AMPLIFIER TRANSISTORS

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR AMPLIFIER TRANSISTORS
MPS8598
MPS8599
TO-92
Plastic Package
EBC
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in free air
Junction to Case in free air
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
Rth(j-a)
Rth(j-c)
MPS8598 MPS8599
60 80
60 80
55
500
625
5.0
1.5
12
-55 to +150
200
83.3
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdow Voltage
MPS8598
MPS8599
Collector Base Voltage
MPS8598
MPS8599
Emitter Base Voltage
Collector Cutoff Current
Collector Cutoff Current
MPS8598
Emitter Cut off Current
DC Current Gain
MPS8599
BVCEO
BVCBO
BVEBO
ICEO
ICBO
IEBO
hFE
IC=10mA,IB=0
IC=100µA,IE=0
IE=10µA, IC=0
VCE=60V, IE=0
VBE=4V, IC = 0
VCE=5V,IC=1mA
VCE=5V,IC=10mA
VCE=5V,IC=100mA*
*Pulse Condition: = Width < 300µs, Duty Cycle < 2%.
Continental Device India Limited
Data Sheet
MIN
60
80
60
80
5
100
100
75
MAX
100
100
100
300
UNITS
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
V
nA
nA
nA
Page 1 of 4




CDIL

MPS8599 Datasheet Preview

MPS8599 Datasheet

PNP SILICON PLANAR AMPLIFIER TRANSISTORS

No Preview Available !

PNP SILICON PLANAR AMPLIFIER TRANSISTORS
MPS8598
MPS8599
TO-92
Plastic Package
EBC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Saturation Voltage
VCE (sat) * IC=100ma, IB=5mA
IC=100ma, IB=10mA
Base Emitter on Voltage
MPS8598
MPS8599
DYNAMIC CHARACTERISTICS
Transition Frequency
VBE (on)
IC=1mA, VCE=5V
IC=10mA, VCE=5V
fT IC=10mA, VCE=5V
f=100MHz
Output Capacitance
Input Capacitance
Cob IE=0, VCB=5V
f=1MHz
Cib Ic=0, VEB=0.5V
f=1MHz
MIN
0.5
0.6
150
*Pulse Condition: = Width < 300µs, Duty Cycle < 2%.
MAX
0.4
0.3
0.7
0.8
8
30
UNITS
V
V
V
V
MHz
pF
pF
Continental Device India Limited
Data Sheet
Page 2 of 4


Part Number MPS8599
Description PNP SILICON PLANAR AMPLIFIER TRANSISTORS
Maker CDIL
Total Page 4 Pages
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