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MPSA29 - NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

This page provides the datasheet information for the MPSA29, a member of the MPSA28 NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS family.

Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCES VCBO VEBO IC PD PD Tj, Tstg MPSA28 80 80 12

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Datasheet Details

Part number MPSA29
Manufacturer CDIL
File Size 115.71 KB
Description NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
Datasheet download datasheet MPSA29 Datasheet
Additional preview pages of the MPSA29 datasheet.

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Other Datasheets by CDIL
  • MPSA28 - NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
  • MPSA05 - NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  • MPSA06 - NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  • MPSA13 - NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS
  • MPSA14 - NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS
  • MPSA42 - NPN EPITAXIAL PLANAR SILICON TRANSISTORS
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  • MPSA44 - NPN TRANSISTORS

Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package EBC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCES VCBO VEBO IC PD PD Tj, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 - 55 to +150 MPSA29 100 100 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 200 83.
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