Description
ollector Emitter Voltage • VCEO IC=10mA, IB=0 Collector Base Voltage Emitter Base Voltage VCBO VEBO IC=10µA, IE=0 IE=10µA, IC=0 Collector Cut Off Current ICEX VCE=60V, VEB(off)=3V Collector Cut Off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current IEBO VEB=3V, IC=0 Base Cut Off Current IBL VCE=60V, VEB(off)=3V DC Current Gain hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=150mA, VCE=1V IC=500mA, VCE=10V • Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% TN2222ARev080304E Continental Device India Limited Data Sheet MIN 40 75 6 35 50 75 100 50 40 UNIT V V V mA W W W W ºC ºC/W ºC/W ºC/W ºC/W MAX 10 10 10 10 20 UNIT V V V nA nA µA nA nA 300 Page 1 of 5 NPN SILICON PLANAR SWITCHING TRANSISTOR TN2222A TO-237 Plastic Package E BC DESCRIPTION Collector Emitter Saturation Voltage Base Emitter Saturation Voltage SYMBOL • VCE (sat) • VBE (sat) TEST CONDITION IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA SMALL SIGNAL CHARACTERISTICS DESCRIPTION Output Capacitance Input Capacitance Small Signal Current Gain Collector Base Time Constant Noise Figure Real Part of mon Emitter High Frequency Input Impedance SYMBOL Cobo Cibo hfe rb'CC NF Re(hie) TEST CONDITION VCB=10V, IE=0, f=100KHz VEB=0.5V, IC=0, f=100KHz IC=1mA, VCE=10V, f=1KHz IC=10mA, VCE=10V, f=1KHz IE=20mA, VCE=20V, f=31.8MHz IC=100µA, VCE=10V, RS=IKΩ, f=1KHz, Bw=1KHz IC=20mA, VCE=20V, f=300MHz SWITCHING TIME DESCRIPTION SYMBOL Delay Time td Rise Time tr Storage Time Fall Time ts tf • Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% TEST CONDITION IC=150mA, IB1=15mA, VCC=30V, VBE(off)=0.5V IC=150mA, IB1= IB2=15mA, VCC=30V TN2222ARev080304E MIN 0.6 MIN 50 75 MIN MAX 0.3 1.0 1.2 2.0 MAX 8.0 25 300 375 150 4.0 60 MAX 10 25 225 60 UNIT V V V V UNIT pF pF pS dB Ω UNIT ns ns ns ns Continental Device India Limited Data Sheet Page 2 of 5 Dimension With 'M' Uncontrolled H M Solderability Ensured Beyond 'M' F B 1 2 3 D AA G LL KA E TO-237 Plastic Package TN2222A D SEC AA DIM MIN.
