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TN2222A Datasheet Preview

TN2222A Datasheet

NPN SILICON PLANAR SWITCHING TRANSISTOR

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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTOR
TN2222A
TO-237
Plastic Package
E BC
For use as a Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Power Dissipation @ Tc=25ºC
@ Ta=25ºC PCB Land Area for
Collector Lead >1 sq inch
@ Ta=25ºC with heat sink
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
Tj, Tstg
VALUE
40
75
6.0
800
0.75
2.2
1.2
1.5
- 55 to +150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Thermal Resistance >with PCB land
area for collector lead >1 sq inch
Thermal Resistance Junction to
Ambient with heat sink
Rth (j-c)
Rth (j-a)
Rth (j-a)
Rth (j-a)
57
167
104
83
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
*VCEO
IC=10mA, IB=0
Collector Base Voltage
Emitter Base Voltage
VCBO
VEBO
IC=10µA, IE=0
IE=10µA, IC=0
Collector Cut Off Current
ICEX
VCE=60V, VEB(off)=3V
Collector Cut Off Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, Ta=150ºC
Emitter Cut Off Current
IEBO
VEB=3V, IC=0
Base Cut Off Current
IBL VCE=60V, VEB(off)=3V
DC Current Gain
hFE IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=150mA, VCE=1V
IC=500mA, VCE=10V
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
TN2222ARev080304E
Continental Device India Limited
Data Sheet
MIN
40
75
6
35
50
75
100
50
40
UNIT
V
V
V
mA
W
W
W
W
ºC
ºC/W
ºC/W
ºC/W
ºC/W
MAX
10
10
10
10
20
UNIT
V
V
V
nA
nA
µA
nA
nA
300
Page 1 of 5




CDIL

TN2222A Datasheet Preview

TN2222A Datasheet

NPN SILICON PLANAR SWITCHING TRANSISTOR

No Preview Available !

NPN SILICON PLANAR SWITCHING TRANSISTOR
TN2222A
TO-237
Plastic Package
E BC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
SYMBOL
*VCE (sat)
*VBE (sat)
TEST CONDITION
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
Output Capacitance
Input Capacitance
Small Signal Current Gain
Collector Base Time Constant
Noise Figure
Real Part of Common Emitter High
Frequency Input Impedance
SYMBOL
Cobo
Cibo
hfe
rb'CC
NF
Re(hie)
TEST CONDITION
VCB=10V, IE=0, f=100KHz
VEB=0.5V, IC=0, f=100KHz
IC=1mA, VCE=10V, f=1KHz
IC=10mA, VCE=10V, f=1KHz
IE=20mA, VCE=20V,
f=31.8MHz
IC=100µA, VCE=10V,
RS=IKΩ, f=1KHz, Bw=1KHz
IC=20mA, VCE=20V,
f=300MHz
SWITCHING TIME
DESCRIPTION
SYMBOL
Delay Time
td
Rise Time
tr
Storage Time
Fall Time
ts
tf
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
TEST CONDITION
IC=150mA, IB1=15mA,
VCC=30V, VBE(off)=0.5V
IC=150mA, IB1= IB2=15mA,
VCC=30V
TN2222ARev080304E
MIN
0.6
MIN
50
75
MIN
MAX
0.3
1.0
1.2
2.0
MAX
8.0
25
300
375
150
4.0
60
MAX
10
25
225
60
UNIT
V
V
V
V
UNIT
pF
pF
pS
dB
UNIT
ns
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 2 of 5


Part Number TN2222A
Description NPN SILICON PLANAR SWITCHING TRANSISTOR
Maker CDIL
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