900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CEL

2SC5754 Datasheet Preview

2SC5754 Datasheet

NPN SILICON RF TRANSISTOR

No Preview Available !

DATA SHEET
NPN SILICON RF TRANSISTOR
NE664M04
/
2SC5754
JEITA
Part No.
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for 460 MHz to 2.4 GHz medium output power amplification
• PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
• High collector efficiency: ηC = 60%
• UHS0-HV technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
NE664M04-A
2SC5754-A
NE664M04-T2-A
2SC5754-T2-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Document No. PU10008EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
The mark shows major revised points.




CEL

2SC5754 Datasheet Preview

2SC5754 Datasheet

NPN SILICON RF TRANSISTOR

No Preview Available !

NE664M04 / 2SC5754
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
13
5.0
1.5
500
735
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
Rth j-a1
Rth j-a2
Test Conditions
Mounted on 38 × 38 mm, t = 0.4 mm
polyimide PCB
Stand alone device in free air
Ratings
170
570
Unit
°C/W
°C/W
2 Data Sheet PU10008EJ02V0DS


Part Number 2SC5754
Description NPN SILICON RF TRANSISTOR
Maker CEL
Total Page 12 Pages
PDF Download

2SC5754 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 2SC5750 NPN SILICON RF TRANSISTOR
Renesas
2 2SC5751 NPN SILICON RF TRANSISTOR
Renesas
3 2SC5752 NPN SILICON RF TRANSISTOR
NEC
4 2SC5753 NPN SILICON RF TRANSISTOR
CEL
5 2SC5753 NPN SILICON RF TRANSISTOR
Renesas
6 2SC5754 NPN SILICON RF TRANSISTOR
NEC
7 2SC5754 NPN SILICON RF TRANSISTOR
CEL
8 2SC5755 Silicon NPN Epitaxial Type Transistor
Toshiba Semiconductor
9 2SC5757 Silicon NPN Epitaxial VHF/UHF wide band amplifier
Hitachi Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy