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CE3521M4 - 20GHz Low Noise FET

Description

Low Noise and High Gain Original Dual Mold Plastic package

Features

  • Low noise figure and high associated gain: NF = 0.70 dB TYP. , Ga = 11.9 dB TYP. @VDS = 2 V, ID = 10 mA, f = 20 GHz.

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Datasheet Details

Part number CE3521M4
Manufacturer CEL
File Size 757.11 KB
Description 20GHz Low Noise FET
Datasheet download datasheet CE3521M4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF Low Noise FET CE3521M4 20 GHz LoEwnteNr oa iSsheorFtEDTociunmDenuta/TlitMleoNladmPe lHaesrteic PKG DESCRIPTION  Low Noise and High Gain  Original Dual Mold Plastic package FEATURES  Low noise figure and high associated gain: NF = 0.70 dB TYP., Ga = 11.9 dB TYP. @VDS = 2 V, ID = 10 mA, f = 20 GHz PACKAGE  Flat-lead 4-pin thin-type super minimold package APPLICATIONS  DBS LNB gain-stage, Mix-stage  Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number CE3521M4 CE3521M4-C2 Package Flat-lead 4-pin thin-type super minimold package Marking C04 Description • Embossed tape 8 mm wide • Pin 1 (source), Pin 2 (drain) face the perforation side of the tape • MOQ 15 kpcs/reel This document is subject to change without notice.
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