NE021 - NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL

General Description

NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems.

Low noise and high current capability provide low intermodulation distortion.

The NE021 series is available as a chip or in several package styles.

Key Features

HIGH.

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NE021 npn silicon high frequency transistor by CEL - Datasheet Preview

Datasheet Details

Part number	NE021
Manufacturer	CEL
File Size	204.13 KB
Description	NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet	NE021 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability.