NE021 Datasheet | CEL

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR Features - HIGH INSERTION GAIN: 18.5 dB at 500 MHz - LOW NOISE FIGURE: 1.5 dB at 500 MHz - HIGH POWER GAIN: 12 dB at 2 GHz - LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain pression NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in...