NE02133 NPN SILICON HIGH FREQUENCY TRANSISTOR
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 d.
00 (CHIP) 07/07B 33 (SOT 23 STYLE) 35 (MICRO-X) NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C) F.
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