NE46234 Datasheet - CEL

NPN SILICON RF TRANSISTOR

NE46234 Features

* Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75

* Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm  0.7 mm (t) ceramic substrate) 2

* Small package : 3-pin power mini mold package ORDERING I

NE46234 General Description

The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, power mini mold (SOT-89). FEATU.

NE46234 Datasheet (162.64 KB)

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NE46234

Manufacturer:

CEL

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162.64 KB

Description:

Npn silicon rf transistor.
NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESC.

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NE46234 NPN SILICON TRANSISTOR CEL

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NE46234 Features

NE46234 General Description

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