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NE662M16 Datasheet NPN SILICON RF TRANSISTOR

Manufacturer: CEL

Overview: DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS.

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Datasheet Details

Part number NE662M16
Manufacturer CEL
File Size 700.05 KB
Description NPN SILICON RF TRANSISTOR
Download NE662M16 Download (PDF)

Key Features

  • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz.
  • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz.
  • 6-pin lead-less minimold package.

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