NE662M16 - NPN SILICON RF TRANSISTOR

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CEL

Part number	NE662M16
Manufacturer	CEL
File Size	700.05 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	NE662M16 Datasheet
Additional preview pages of the NE662M16 datasheet.

Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz.
High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz.
6-pin lead-less minimold package.

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Published: Sep 17, 2016 |