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NE68019, NE680 NPN SILICON HIGH FREQUENCY TRANSISTOR

NE68019 Description

NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR .
The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications.

NE68019 Features

* HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
* LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz
* HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz

NE68019 Applications

* Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the

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This datasheet PDF includes multiple part numbers: NE68019, NE680. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NE68019, NE680
Manufacturer
CEL
File Size
1.36 MB
Datasheet
NE680-CEL.pdf
Description
NPN SILICON HIGH FREQUENCY TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: NE68019, NE680.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

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  • NE68518 - NONLINEAR MODEL (NEC)
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  • NE685M03 - NPN SILICON TRANSISTOR (NEC)
  • NE685M23 - NPN SILICON TRANSISTOR (NEC)
  • NE686 - SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)

📌 All Tags

NPN SILICON HIGH FREQUENCY TRANSISTOR CEL
CEL NE68019-like datasheet