NE85619 Datasheet - CEL

NPN SILICON EPITAXIAL TRANSISTOR

NE85619 Features

* Low Voltage Use.

* High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

* Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

* Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

* High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

NE85619 General Description

The NE85619 / 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers fromVHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pass.

NE85619 Datasheet (4.33 MB)

NE85619 Datasheet Preview — Preview of NE85619 PDF

Datasheet Details

Part number:

NE85619

Manufacturer:

CEL

File Size:

4.33 MB

Description:

Npn silicon epitaxial transistor.

📁 Related Datasheet

NE85618 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)

NE85619 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)

NE85619-A NPN SILICON EPITAXIAL TRANSISTOR (CEL)

NE85619-T1-A NPN SILICON EPITAXIAL TRANSISTOR (CEL)

NE856 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)

NE85600 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)

NE85630 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)

NE85630 NPN Silicon RF Transistor (Renesas)

NE85632 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)

NE85633 NPN Silicon RF Transistor (Renesas)

TAGS

NE85619 NPN SILICON EPITAXIAL TRANSISTOR CEL

Image Gallery

NE85619 Features

NE85619 General Description

Datasheet Details

File Size:

Description:

NE85619 Distributor