Datasheet Details
| Part number | NX7361JB-BC |
|---|---|
| Manufacturer | CEL |
| File Size | 183.82 KB |
| Description | LASER DIODE |
| Download | NX7361JB-BC Download (PDF) |
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| Part number | NX7361JB-BC |
|---|---|
| Manufacturer | CEL |
| File Size | 183.82 KB |
| Description | LASER DIODE |
| Download | NX7361JB-BC Download (PDF) |
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NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.
It is designed for light sources of optical measurement equipment (OTDR).
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified) SYMBOLS VFP ITH Pf PART NUMBER PARAMETERS AND CONDITIONS Forward Voltage, IF = 30 mA Threshold Current Optical Output Power from Fiber, IFP = 1000 mA1 IFP = 600 mA1 IFP = 400 mA1 mA1 UNITS V mA mW 150 90 40 1290 1310 3.0 1.0 1.4 1330 7.0 2.0 2.0 MIN NX7361JB-BC TYP 2.5 35 MAX 4.0 65 λC σ tr tf Center Wavelength, RMS, IFP = 400, 600, 1000 mA1 Spectral Width, RMS, IFP = 400, 600, 1000 Rise Time, 10-90% Fall Time, 90-10% nm nm ns ns Note: 1.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW.
| Part Number | Description |
|---|---|
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