UPA810T Key Features
- SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package
- LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
- HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz
- EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
- HIGH COLLECTOR CURRENT: 100 mA
- Part: UPA810T
- Manufacturer: CEL
- Size: 439.02 KB
Other UPA810T Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
UPA810TC | NPN SILICON EPITAXIAL TRANSISTOR |
UPA810T Description
The UPA810T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications.