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UPD5702TU - Si LD MOS POWER AMPLIFIER

This page provides the datasheet information for the UPD5702TU, a member of the UPD5702 Si LD MOS POWER AMPLIFIER family.

Description

NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application.

This IC consists of two stage amplifiers.

The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package.

Features

  • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz.
  • ON CHIP OUTPUT POWER.

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Datasheet preview – UPD5702TU

Datasheet Details

Part number UPD5702TU
Manufacturer CEL
File Size 176.33 KB
Description Si LD MOS POWER AMPLIFIER
Datasheet download datasheet UPD5702TU Datasheet
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Full PDF Text Transcription

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NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION • SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP • PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT DESCRIPTION NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
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