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UPG2155TB - L-BAND 4 W HIGH POWER SPDT SWITCH

Description

The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications.

The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.

Features

  • Low insertion loss : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz : LINS = 0.40 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.5 GHz.
  • High linearity : 2f0 = 70 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm : 3f0 = 75 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm.
  • 6-pin super minimold package (2.1 × 2.0 × 0.9 mm).

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Datasheet Details

Part number UPG2155TB
Manufacturer CEL
File Size 509.67 KB
Description L-BAND 4 W HIGH POWER SPDT SWITCH
Datasheet download datasheet UPG2155TB Datasheet

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www.DataSheet4U.com GaAs INTEGRATED CIRCUIT UPG2155TB NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity. FEATURES • Low insertion loss : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz : LINS = 0.40 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.5 GHz • High linearity : 2f0 = 70 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm : 3f0 = 75 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm • 6-pin super minimold package (2.1 × 2.0 × 0.
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