Datasheet Details
| Part number | 2N5551 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 709.16 KB |
| Description | SILICON NPN TRANSISTORS |
| Download | 2N5551 Download (PDF) |
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Overview: 2N5550 2N5551 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i .
Download the 2N5551 datasheet PDF. This datasheet also includes the 2N5550 variant, as both parts are published together in a single manufacturer document.
| Part number | 2N5551 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 709.16 KB |
| Description | SILICON NPN TRANSISTORS |
| Download | 2N5551 Download (PDF) |
|
|
|
: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications.
MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5550 2N5551 Collector-Base Voltage VCBO 160 180 Collector-Emitter Voltage VCEO 140 160 Emitter-Base Voltage Continuous Collector Current VEBO 6.0 IC 600 Power Dissipation PD 625 Power Dissipation (TC=25°C) PD 1.0 Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA -65 to +150 200 Thermal Resistance ΘJC 125 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5550 2N5551 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX ICBO VCB=100V - - 100 - - - ICBO ICBO VCB=120V VCB=100V, TA=100°C - - - - - 50 - - 100 - - - ICBO VCB=120V, TA=100°C - - - - - 50 IEBO VEB=4.0V - - 50 - - 50 BVCBO BVCEO IC=100μA IC=1.0mA 160 - - 180 - 140 - - 160 - - BVEBO IE=10μA 6.0 - - 6.0 - - VCE(SAT) IC=10mA, IB=1.0mA - - 0.15 - - 0.15 VCE(SAT) VBE(SAT) IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA - - 0.25 - - 0.20 - - 1.0 - - 1.0 VBE(SAT) IC=50mA, IB=5.0mA - - 1.2 - - 1.0 hFE VCE=5.0V, IC=1.0mA 60 - - 80 - - hFE VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=50mA 60 - 250 80 - 250 20 - - 30 - - hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 - 200 50 - 200 fT VCE=10V, IC=10mA, f=100MHz 100 - 300 100 - 300 Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz - - 6.0 - - 6.0 - 35 - - 35 - NF VCE=5.0V, IC=250μA, RS=1.0kΩ, f=10Hz to 15.7kHz - - 10 - - 8.0 UNITS nA nA μA μA nA V V V V V V V MHz pF pF dB R3 (20-May 2022) 2N5550 2N5551 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5551 | Silicon NPN Transistor | NTE |
 |
2N5551 | Amplifier Transistors | Motorola |
 |
2N5551 | NPN General Purpose Amplifier | Fairchild Semiconductor |
 |
2N5551 | NPN Amplifier | ON Semiconductor |
 |
2N5551 | NPN Transistor | SeCoS |
| Part Number | Description |
|---|---|
| 2N5550 | SILICON NPN TRANSISTORS |
| 2N5555 | N-CHANEL FET |
| 2N5582 | SILICON NPN TRANSISTOR |
| 2N5038 | SILICON NPN POWER TRANSISTORS |
| 2N5039 | SILICON NPN POWER TRANSISTORS |
| 2N5060 | SILICON CONTROLLED RECTIFIERS |
| 2N5061 | SILICON CONTROLLED RECTIFIERS |
| 2N5062 | SILICON CONTROLLED RECTIFIERS |
| 2N5063 | SILICON CONTROLLED RECTIFIERS |
| 2N5064 | SILICON CONTROLLED RECTIFIERS |