n-channel enhancement mode field effect transistor.
Type CEP06N7 CEB06N7 CEF06N7
VDSS 700V 700V
700V
RDS(ON) 2Ω 2Ω
2Ω
ID @VGS 6A 10V 6A 10V 6A d 10V
Super high dense cell design for extremely low RDS(ON). High power a.
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