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n-channel enhancement mode field effect transistor.
Type CEP08N6A CEB08N6A CEF08N6A VDSS 600V 600V 600V RDS(ON) 1.25Ω 1.25Ω 1.25Ω ID 7.5A 7.5A 7.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RD.
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