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CEB9055 Datasheet Preview

CEB9055 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEP9055/CEB9055
CEF9055
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP9055
CEB9055
CEF9055
VDSS
55V
55V
55V
RDS(ON)
10.5m
10.5m
10.5m
ID
100A
100A
100A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 g & TO-263 package & TO-220F full-pak for through hole.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 55
VGS ±20
ID 100 100 e
IDM f
300 300 e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
200 75
PD 1.3 0.5
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
325 325
50 50
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2
65
Units
C/W
C/W
Rev 1. 2005.September
1
http://www.cetsemi.com




CET

CEB9055 Datasheet Preview

CEB9055 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEP9055/CEB9055
CEF9055
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 55V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 62A
Forwand Transconductance
Dynamic Characteristics c
gFS VDS = 25V, ID = 62A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 28V, ID = 62A,
VGS = 10V, RGEN = 4.5
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 44V, ID = 62A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 62A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, IAS = 50A, VDD = 30V, RG = 25Ω, Starting TJ = 25 C
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.The mounting torque (4-40/M3 screw) in TO-220 package is recommended within 3-4Kgf-cm (MAX. 4Kgf-cm)
Min
55
2
Typ
8.8
28
2700
800
115
40
20
65
15
60
15
22
Max Units
10
100
-100
V
µA
nA
nA
4V
10.5 m
S
pF
pF
pF
80 ns
45 ns
120 ns
35 ns
80 nC
nC
nC
62 A
1.3 V
4
2


Part Number CEB9055
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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